| 摘要 |
PURPOSE:To provide a semiconductor processing equipment and a method for the preparation of semiconductor based thereon that are capable of performing desired processes at high speed and a constant processing rate using oxygen atom radicals in oxygen plasma produced by high frequencies or microwaves. CONSTITUTION:A downflow ashing system consists of a microwave guide 10 that introduces microwaves; a plasma producing chamber 12 that produces O2 plasma by microwaves introduced into the microwave guide 10; and an ashing reaction chamber 14 that performs ashing using oxygen atom radicals in O2 plasma. The entire surface of the inside wall of the ashing reaction chamber 14 of Al, is covered with a quartz film 16. A shower head 22 of Al has a large number of small holes arranged in a radial pattern, through which oxygen atom radicals are transmitted from the plasma producing chamber 12 to the ashing reaction chamber 14. The entire surface of the shower head 22 is also covered with a quartz film. |
