THIN FILM DIELECTRIC ELEMENT

摘要

PURPOSE:To provide the title compact thin film dielectric element having large accumulated charge and high junction strength with a substrate. CONSTITUTION:A metallic thin film 3 comprising a transition metal such as Ti is formed on a substrate 2 comprising silicon wafer with one oxide film formed thereon and then a Pt film 4 is formed on the metallic thin film 3 to manufacture a lower electrode 5. Furthermore, a dielectric film 6 comprising rhombic zirconium oxide is formed on the lower electrode 5 by CVD process etc., and then an Au electrode is evaporated on the dielectric film 6 to form an upper electrode 7 for manufacturing the title thin film dielectric element.