MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

The method includes the steps of growing a thin oxide film (33 or 36) on a lower layer (32 or 38) i.e., a doped poly-Si layer (32) and a natural oxide film formed thereon, or an active layer (38) and a natural oxide film formed thereon, depositing a high melting point metal film (34 or 37), i.e., Ti film on the thermal oxide film (33 or 36), and heat-treating the film (34 or 37) to form a titanium silicide film, thereby isolating the lower layer from a silicide reaction interface to form a uniform silicide film without cohesive effect.