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发明名称
Method of fabricating semiconductor memory device having a cylindrical capacitor electrode
摘要
申请公布号
US5273925(A)
申请公布日期
1993.12.28
申请号
US19910788889
申请日期
1991.11.07
申请人
NEC CORPORATION
发明人
YAMANAKA, KOJI
分类号
H01L27/04;H01L21/822;H01L21/8242;H01L27/10;H01L27/108;(IPC1-7):H01L21/70;H01L27/00
主分类号
H01L27/04
代理机构
代理人
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