| 摘要 |
A method of manufacturing a semiconductor having higher characteristics, by which an oxide film having extremely high insulating properties can be formed in even a low temperature process. In a step where an oxide film is formed by oxidizing the surface of a semiconductor wafer or a thin metallic film, the oxide film is formed in a plasma of a mixed gas containing inert gas and oxygen gas. Part of the inert gas is contained in the oxide film.
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