| 摘要 |
PURPOSE:To obtain a highly reliable semiconductor device of a structure, where in a coverage ratio of a metal wiring in contact holes is improved. CONSTITUTION:A semiconductor device is constituted of a semiconductor substrate 1, an interlayer oxide film 4 provided on this substrate 1, contact holes 5 which penetrate this film 4 and are bored on the substrate 1, sidewalls 20, which are provided in these holes 5 and have the same conductivity type as that of diffused layers 2a and 2b to be brought into contact in the substrate 1, and a metal wiring 6A connected with the layers 2a and 2b via the holes 5, in which these sidewalls 20 are provided. |
