| 摘要 |
<p>A BiMOS integrated circuit device comprises a bipolar transistor and at least one MOSFET. The collector and emitter of the bipolar transistor are connected to a high potential source and a low potential source, respectively. The MOSFET has two gate electrodes (122-1, 122-2), a source, and a drain. The source is connected to the high potential source, and the drain is the base of the bipolar transistor by a diffusion layer (200). The diffusion layer (200) is located between the gate electrodes (122-1, 122-2), and serves as both the base of the bipolar transistor and the drain of the MOSFET. Therefore, the MOSFET has a great channel width, and a large current can be supplied to the base of the bipolar transistor. In other words, the MOSFET has a great driving capability, and the bipolar transistor has a high amplification factor.</p> |
