MANUFACTURING METHOD OF SELF ALIGN CONTACT USING POLY-SILICON LAYER

摘要

The method includes the steps of sequentially forming a gate oxide film (2), a polysilicon layer (3) and an insulating oxide film (4) on the Si substrate (1), forming a local poly-Si layer (5) for a passivation film thereon, the layer (5) having an etching selection ratio larger than the film (4) and a width wider than the predetermined contact area, forming gate electrodes (3a,3b) by using a gate electrode masking process, forming an insulating film thereon to etch the insulating film and gate oxide film of the contact area to expose the partial layer (5) and the substrate between the electrodes, and contacting a conducting layer to the exposed substrate, thereby protecting the insulating oxide layer on the electrodes.