| 摘要 |
PURPOSE:To increase luminous intensity by forming a surface which is not parallel with the surface of a P-type SiC layer, in the part which is positioned on the side opposite to a P-type side electrode of an N-type SiC substrate and faces the electrode. CONSTITUTION:An N-type SiC single crystal substrate 2 has one main surface 2a and the other main surface (non-parallel surface) 2b inclined at an angle theta1 to the main surface 2a. Thereby emitted light is outputted outside an element 1, while the frequency of reflection from the other main surface 2b of the substrate 2 or the surface (upper surface) of a P-type SiC single crystal layer 4 is small, that is, while the absorption in the element 1 is small. Hence the luminous intensity of the element can be increased. |
