发明名称 |
Charge damage free implantation by introduction of a thin conductive layer |
摘要 |
A method is described for fabricating an integrated circuit in which the gate electrodes and gate dielectric silicon oxide are protected from electrical charge damage during ion implantation. A thin conducting layer is deposited over the pattern of gate electrodes/gate dielectric silicon oxide wherein the conducting layer is grounded to the silicon substrate. The high-dose ion implantation is applied through the conducting layer which layer grounds the electrical charge resulting from the ion implantation, and hence protects the gate electrodes from charge damage. The electron "flood gun" need not be used.
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申请公布号 |
US5384268(A) |
申请公布日期 |
1995.01.24 |
申请号 |
US19930007713 |
申请日期 |
1993.01.22 |
申请人 |
UNITED MICROELECTRONICS CORPORATION |
发明人 |
LUR, WATER;CHEN, BEN;HUANG, CHENG H. |
分类号 |
H01L21/265;(IPC1-7):H01L21/265 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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