| 摘要 |
PURPOSE: To avoid rounding or bending the corners by polishing a semiconductor substrate for raising the planar treating efficiency, using a polishing pad having a large mean protrusion diameter, low standard deviation in the protrusion heights and low square means surface roughness. CONSTITUTION: Regions 621 correspond to polishing regions of a polishing pad 61. The polishing regions are part of the pad, where a semiconductor substrate is exposed during polishing. They are deformed to make the protrusions flat and lower the square mean surface roughness. Making them flatter means lowering the protrusion heights at large protrusion diameters. Each region 621 of an improved polishing pad 62 has protrusions and mean protrusion diameter of at least 40 microns and a standard deviation of the protrusion heights is 30 microns or less and square mean surface roughness of 30 microns or less. |
