发明名称 |
Contact structure for connecting an electrode to a semiconductor |
摘要 |
A contact structure for connecting a semiconductor device to a wiring electrode includes a semiconductor layer forming a part of the semiconductor device. A first contact layer of reduced resistivity covers a surface of the semiconductor layer. An insulating structure is provided on the first contact layer so as to bury the first contact layer underneath. A penetrating hole is opened through the insulating structure so as to expose a part of the first contact layer. A second contact layer of reduced resistivity is provided on the part of the first contact layer exposed by the penetrating hole. The second contact layer extends from a bottom of the penetrating hole along its side wall. A conductor layer forms the wiring electrode provided on the second contact layer.
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申请公布号 |
US5384485(A) |
申请公布日期 |
1995.01.24 |
申请号 |
US19930115242 |
申请日期 |
1993.08.18 |
申请人 |
FUJITSU LIMITED |
发明人 |
NISHIDA, KENJI;SATO, NORIAKI |
分类号 |
H01L29/43;H01L21/28;H01L21/285;H01L21/336;H01L21/60;H01L23/485;H01L23/532;(IPC1-7):H01L23/48;H01L29/76;H01L23/52;H01L29/40 |
主分类号 |
H01L29/43 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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