| 摘要 |
According to the invention, use is made of the temperature dependence of the space charge region (8) of a p-n junction with a semiconductor with a band width of over 2 eV for a temperature sensor usable at high temperatures of at least 800 DEG C. The size of this space charge region determines the current carrying capacity of an n or p-conductive channel (4) between a source (S) and a drain (D) electrode. The source-drain current (ISD) can thus be used as a clear measure of the temperature. The temperature sensor is preferably used to measure the temperature of a high-temperature or power component and to this end is integrated monolithically with this semiconductor component on a substrate (2). |
