| 摘要 |
PURPOSE:To greatly improve the reliability of junction part between an Al electrode and a bump electrode in a transfer system in which the bump electrode is formed on the Al electrode of a semiconductor element. CONSTITUTION:After a resin film 24, having an aperture 25 on the part corresponding to the Al electrode 13 of a semiconductor element 12, has been formed on a bump electrode forming substrate 10, a bump electrode 11 is formed in the aperture 25 in such a manner that the head of the bump electrode 11 will be protruding from the aperture 25. Then, after the bump electrode 11 and the Al electrode 13 have been aligned, the Al electrode 13 is pressure-welded to the head of the bump electrode 11. Then, a part of the Al electrode 13 and a part of the head of the bump electrode 11 are alloyed by heating the pressure- welded Al electrode 13 and the bump electrode 11, and at the same time, the aperture 25 is widened by contracting the resin film 24. Then, the bump electrode 11 is separated from the bump electrode forming substrate 10, and the separated bump electrode 11 is connected to the wiring electrode of the wiring substrate. |
