| 摘要 |
PURPOSE:To realize high luminance of a semiconductor light emitting element, by constituting a current diffusion layer of N-type InGaA P whose band gap energy is larger than that of a light emitting layer. CONSTITUTION:A buffer layer 2, a light reflecting layer 3, and a current blocking layer 4 are formed on a substrate 1. Further the following are grown in order; a double hetero structure, a clad layer 5 of P-type In0.5(Ga0.3Al0.7)0.5P, an active layer 6 of undoped In0.5(Ga0.55Al0.45)0.5P, and a clad layer 7 of N-type In0.5(Ga0.3Al0.7)0.5P. A current diffusion layer 8 of N-type In0.5(Ga0.3Al0.7)0.5P is laminated, where the band gap energy is set larger than the active layer 6. As to the correlation between the thickness of the current diffusion layer 8 and the luminous efficiency, it becomes higher as the thickness becomes larger, and a stable value is obtained when the thickness is 4mum or larger. |
