PRODUCTION OF THIN-FILM TRANSISTOR AND DISPLAY DEVICE AND REAR SURFACE EXPOSURE DEVICE

摘要

PURPOSE:To provide the small-sized thin-film transistor(TFT) having a read- write doped drain structure, offset structure and high performance by etching a gate electrode with a positive resist pattern as a mask to produce the gate electrode and forming offset regions at nearly the same width on both sides of the gate electrode in self-alignment. CONSTITUTION:The positive resist 15 is applied to a substrate so as to cover the part above the gate electrode 12 and the substrate is irradiated 16 with UV rays from its rear surface to expose this positive resist 15. The positive resist pattern 15' of the shape of the electrode 12 is formed when the positive resist is developed thereafter. In succession, the flank parts of the gate electrode 12 are etched and the gate electrode 12' is finished when the gate electrode 12 is etched. The positive resist pattern 15' is removed and an insulating film (SiO2 film) 19 for interlayer insulation is formed. A contact hole is formed therein and a metallic wiring 20 is formed, by which the polysilicon TFT is obtd. The L3 parts are the offset regions in such a case.