发明名称 SEMICONDUCTOR LIGHT PULSE SOURCE
摘要 PURPOSE: To generate a narrow-spectrum width compressed light pulse by providing a laser beam resonance cavity, which is defined by a longitudinal waveguide structure and two sides of a chip and contains a specific active material and a source, including a feed current generator for the gain switching of the chip which includes a specified gain region and additional region. CONSTITUTION: Waveguide structures 4, 6, along the length of a chip and two sides of the chip, form a laser beam resonance cavity including an active material for activating the chip for amplifying a laser beam up to a frequency which is controlled by the optical lengths of the waveguide structures 4, 6, thereby generating a laser beam at this frequency. A source includes feed current generators 20, 22 for feeding currents to the chip, to oscillate in the form of optical pulses and switch over the gain of the chip and also includes a grain region 40 for switching the gain of the chip with a parasitic change of the reflective index and at least additional regions 42, 44 which have no parasitic change in the reflective index.
申请公布号 JPH0715071(A) 申请公布日期 1995.01.17
申请号 JP19940004080 申请日期 1994.01.19
申请人 ALCATEL NV 发明人 ERIZABESU BURAN;JIYOZE SHIENOA;JIYANNPIEERU AMEEDO;DOMINIKU RESUTERURAN
分类号 G02F1/35;H01S3/06;H01S3/10;H01S3/108;H01S5/042;H01S5/062;H01S5/0625;H01S5/10;H01S5/125;H04B10/00 主分类号 G02F1/35
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