ISOLATING METHOD OF SEMICONDUCTOR DEVICES

摘要

PURPOSE: An isolating method of semiconductor substrate is provided to minimize an overlap between channel stopper impurities and source/drain impurities by removing protrusion parts of isolating oxide. CONSTITUTION: The method comprises the steps of forming a first oxide(102) and a nitride layer(104) on a silicon substrate(100); defining an active region by etching the nitride layer(104); forming a polysilicon spacer(106) at both sidewalls of the nitride pattern; growing an isolating oxide(108) by thermal oxidation; forming a third oxide(110) on the resultant structure and etch-back the third oxide(110) so as to remove protrusion parts of edge portions of the isolating oxide(108) and removing the nitride pattern and the first oxide(102). Using the etch-back process, the protrusion parts are removed and the spaced distance between a channel stopping region(114) and a source/drain region(116) is to be long. Thereby, it is possible to reduce a leakage current.