| 摘要 |
PROBLEM TO BE SOLVED: To provide a capacitor for adjusting the desired capacity of a capacity for each circuit without changing the electrode area of the capacitor, due to design correction for possibly inviting fluctuation in the value of parasitic capacitance and without changing thermal oxidation conditions for changing the impurity profile of a device, and its manufacturing method. SOLUTION: By providing a process for selectively doping additional impurity in first and second capacitors 14a and 14b, the concentration of an impurity which is contained in a second lower electrode 16b of the second capacitor 14b becomes higher than that of the impurity being contained in a first lower electrode 16a of the first capacitor 14a, only the surface of the second lower electrode 16b is oxidized at an increased speed due to identical thermal oxidation, and the film thickness of a second capacitor oxide film 18b being formed on the second lower electrode 16b becomes thicker than that of the first capacitor oxide film 18a that is formed on the first lower electrode 16a.
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