发明名称 SINGLE-WAFER PROCESSING TYPE HEAT TREATMENT APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a single-wafer processing type heat treatment apparatus which can prevent a processing gas from penetrating into the rear side of a placing table. SOLUTION: A column 34 for placing table is erected in a treatment vessel 32 which is made evacuatable, and a ring-like support shelf part 36 for placing table is formed in the upper part of the column, and further the lower surface of the peripheral part of the placing table, on which an object W to be processed is placed, is supported by the support shelf part and the upper surface of the peripheral part thereof is fixed by a ring-like member 44 for retaining the placing table. The object to be processed is heated by a heating lamp means 64 provided thereunder and is subjected to prescribed processing in the processing gas. In such a single-wafer processing heat treatment apparatus, a ring-like spacer member 38 for placing table is provided between the support shelf part and the lower surface of the peripheral part of the placing table, so as to prevent the processing gas from penetrating into the rear side of the placing table. Thus, the process gas can be prevented from penetrating thereinto.
申请公布号 JP2000183049(A) 申请公布日期 2000.06.30
申请号 JP19980375152 申请日期 1998.12.11
申请人 TOKYO ELECTRON LTD 发明人 OKASE WATARU;HASEI MASAAKI
分类号 H01L21/31;C23C16/44;C23C16/458;H01L21/285;(IPC1-7):H01L21/31 主分类号 H01L21/31
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