Solid state image sensor.

摘要

This solid state image sensor includes: a number of photodiodes arranged in a plane two dimensional array in several X axis direction photodiode rows; an X axis CCD for each photodiode row, each including a number of CCD elements of which at least one corresponds to each one of the photodiodes in the corresponding photodiode row, each of the X axis CCDs transmitting in the X axis direction photoelectric conversion signals output from its corresponding photodiode row; a Y axis CCD which transmits in the Y axis direction photoelectric conversion signals which it receives from the X axis CCDs; and at least one relay CCD element for each X axis CCD, each connecting between its corresponding X axis CCD and the Y axis CCD and outputting to the Y axis CCD photoelectric conversion signals which it receives from its corresponding X axis CCD. And, the length of at least the relay CCD element which is next to the Y axis CCD is longer than the length of one of the X axis CCD elements. Optionally but desirably, the boundary between a region which receives light from an object to be photographed and which includes a number of the photodiodes, and a region over which light from the object is intercepted and which includes the Y axis CCD, lies over the relay CCD elements. <IMAGE>