发明名称 |
SEMICONDUCTOR ACCELERATION SENSOR AND FABRICATION THEREOF |
摘要 |
PURPOSE:To provide a highly accurate semiconductor acceleration sensor, and fabrication method thereof, in which the detection sensitivity is enhanced while reducing the size and the self-diagnostic function of sensitivity is also enhanced through the use of micromachining technology of semiconductor. CONSTITUTION:A silicon substrate is subjected to anisotropic etching to produce an gradually broadening extension weight part 14c which is bonded to the free end face of at the weight part 3 of a conventional semiconductor acceleration sensor in order to increase the mass at the weight part 3 thus enhancing the sensitivity in the detection of acceleration. The self-diagnostic function of detection sensitivity is also enhanced by increasing the area of free end face at the weight part 3 thereby increasing the electrostatic force functioning on a fixed electrode upon application of a voltage. |
申请公布号 |
JPH075192(A) |
申请公布日期 |
1995.01.10 |
申请号 |
JP19930144519 |
申请日期 |
1993.06.16 |
申请人 |
NISSAN MOTOR CO LTD |
发明人 |
HANAMURA AKIHIRO;MURO HIDEO |
分类号 |
G01P15/12;B81B3/00;B81C1/00;G01P21/00;H01L29/84;(IPC1-7):G01P15/12 |
主分类号 |
G01P15/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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