发明名称 SEMICONDUCTOR ACCELERATION SENSOR AND FABRICATION THEREOF
摘要 PURPOSE:To provide a highly accurate semiconductor acceleration sensor, and fabrication method thereof, in which the detection sensitivity is enhanced while reducing the size and the self-diagnostic function of sensitivity is also enhanced through the use of micromachining technology of semiconductor. CONSTITUTION:A silicon substrate is subjected to anisotropic etching to produce an gradually broadening extension weight part 14c which is bonded to the free end face of at the weight part 3 of a conventional semiconductor acceleration sensor in order to increase the mass at the weight part 3 thus enhancing the sensitivity in the detection of acceleration. The self-diagnostic function of detection sensitivity is also enhanced by increasing the area of free end face at the weight part 3 thereby increasing the electrostatic force functioning on a fixed electrode upon application of a voltage.
申请公布号 JPH075192(A) 申请公布日期 1995.01.10
申请号 JP19930144519 申请日期 1993.06.16
申请人 NISSAN MOTOR CO LTD 发明人 HANAMURA AKIHIRO;MURO HIDEO
分类号 G01P15/12;B81B3/00;B81C1/00;G01P21/00;H01L29/84;(IPC1-7):G01P15/12 主分类号 G01P15/12
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