| 摘要 |
PURPOSE:To improve reliability by implanting Ga ions into the shifter remaining defect part of a phase shift mask and irradiating the implanted region with a laser beam, thereby obviating the generation of a fresh defect-according to the removal of the remaining defect. CONSTITUTION:The position and size of the shifter remaining defect part 25 are previously detected by a defect inspecting device in the case of using a blank having a structure consisting of a transprent substrate 21, a conductive film 22, a shift 23 and a Cr film 24. The Ga ion beam is then implanted by the Ga ion beam 26 of an FIB device to the shifter remaining defect part 25 to form a Ga ion region 27. The Ga ion implanted region 27 is then irradiated with the Nd:YAG laser beam at the same area thereof, by which the shifter remaining defect part 25 is removed and the corrected part 29 of the shifter remaining defect is obtd. Namely, the Ga ions are implanted to the shifter remaining defect part 25 to form the implanted region 27 where a light absorptive material exists. This region is irradiated with the laser beam, by which light energy is converted into thermal energy and the shifter remaining defect part 25 is evaporated away. |
