| 摘要 |
<p>PURPOSE:To reduce the thickness of an outside-enclosure of a resin-sealed semiconductor element by installing a wiring part at a groove crossing a semiconductor substrate, forming an active element and a passive element on the other surface, and then connecting a conductive metal plate and a pad part laid out corresponding to the other surface. CONSTITUTION:An active element and a passive element are built on one surface A of a semiconductor substrate 10 and a groove 11 is formed on the other surface B toward the inside. A lead 12 consisting of a conductive metal is sealed to the groove by an insulation adhesive 13. Then, an inner lead 14 constituting one portion of the lead frame is laid out opposite to the side surface of the semiconductor substrate 10. The groove 11 should completely cross the other surface B of the semiconductor substrate 10. The inner lead 14 is connected between the active element and passive element via a wiring layer by providing a pad part at the peripheral edge of the semiconductor substrate 10 and the pad and the inner lead are connected through a thin metal wire 15 bridge. After that, the semiconductor substrate 10, the inner lead 14, and a metal thin wire 15 are buried into a sealing resin layer 16.</p> |
