| 摘要 |
A process for growing a semiconductor crystal, comprising growing a group III-V compound semiconductor containing P as a group V element by an organometal vapor phase epitaxy by using tertiary butyl phosphine (TBP) as a source of P constituting a grown layer and doping the semiconductor with a dopant gas during a growth of the semiconductor. In this process, the source gas and dopant gas are fed under a condition satisfying a requirement represented by the following formula, to conduct a growth of the crystal: <IMAGE> (1) wherein n is a carrier concentration of the growing semiconductor crystal, T is a temperature of the substrate and an atmosphere in the vicinity of the substrate, PTBP0 is an equilibrium vapor pressure of TBP or a decomposition product thereof, PD0 is an equilibrium vapor pressure of a dopant or a decomposition product thereof, P0 is a total pressure, f0 is a total flow rate, and fTBP is a flow rate of TBP.
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