发明名称 |
Semiconductor device having a gate electrode of polycrystal layer and a method of manufacturing thereof |
摘要 |
A semiconductor device without erroneous operation and deterioration of characteristics in a transistor even when an impurity region is formed in self-alignment by ion implantation using a gate electrode as a mask, and a method of manufacturing thereof are disclosed. This semiconductor device includes a gate electrode formed of a polycrystal silicon layer 4b having the crystal orientation of the crystal grains arranged in a definite orientation. By implanting ions at a predetermined angle with respect to the crystallographic axis of the crystal grains of the polycrystal silicon layer 4b in forming a p+impurity region 5 by ion implantation using the gate electrode as a mask, the channeling phenomenon where ions pass through the gate electrode is prevented. Therefore, generation of erroneous operation and deterioration of characteristics in a transistor are prevented in forming an impurity region in self-alignment by ion implantation using the gate electrode as a mask.
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申请公布号 |
US5381032(A) |
申请公布日期 |
1995.01.10 |
申请号 |
US19930111964 |
申请日期 |
1993.08.26 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
KOKAWA, YOSHIKO;KOYAMA, TOHRU;KUSAKABE, KENJI;TAMURA, KATSUHIKO;NAKAMURA, YASUNA |
分类号 |
H01L21/205;H01L21/265;H01L21/266;H01L21/28;H01L21/3205;H01L29/423;H01L29/43;H01L29/49;H01L29/78;(IPC1-7):H01L29/76;H01L29/04;H01L23/48;H01L23/52 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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