| 摘要 |
A semiconductor processing apparatus for a semiconductor wafer is characterised by containing a cylindrical quartz made case 13 having a lower end opening is provided in the process chamber 12 to mount the wafer. A flange 34 of the lower end of the case 13 is airtightly connected to a bottom wall of the process chamber 12 to surround an opening 12a formed in the bottom wall of the process chamber 12 and the inner space of the case 13 is airtightly isolated from a process space. The opening of the bottom wall is closed by a cover 24 from the outside of the process chamber 12. The case 13 contains a resistance heating body (14, Fig 2) is provided in the case 13 to be opposite to a top plate 31; feed lines 15a and 15b, and a thermocouple 16 introduced into the case 13 from an atmospheric side through the cover 24; and an inactive gas supply pipe 43 and an exhausting pipe (45, Fig 2) are connected to the cover 24. The inside of the case 13 is supplied with an inactive gas atmosphere which prevents oxidation of the resistance heating body 14. The processing apparatus is preferably used in CVD. <IMAGE> |
