Photoresist composition.

摘要

A negative or positive photoresist composition which comprises an alkali soluble resin containing at least one resin selected from the group consisting of a partially alkyletherified polyvinylphenol and a partially alkyletherified hydrogenated polyvinylphenol, a photo-induced acid precursor containing at least a kind of sulfonic acid ester of N-hydroxyimide compounds and a crosslinking agent or dissolution inhibitor, and this photoresist composition is excellent in various properties such as heat resistance, film thickness retention, coating property, profile and the like, and further exhibits high sensitivity and high resolution when far ultraviolet rays including excimer lasers are used as the light source. It also hardly cause a scam during the developing process.