发明名称 |
Controlled semiconductor capacitors |
摘要 |
A controlled capacitor system, which includes a capacitor element (C1) and a forward-biased diode element (D2) connected in series with the capacitor element (C1). The system is such that the diode element (D2) has a capacitance which is less than the capacitance of the capacitance of the capacitor element (C1) when the diode element (D2) is under zero bias. The capacitance of the diode element (D2) is controlled by varying the forward current (I2) through the diode (D2). The forward current (I2) acting to control the capacitance of the diode element is selected such that the capacitance of the diode element (D2) is smaller than the capacitance of the capacitor element (C1) when the current (I2) through the diode element (D2) is below a minimum value. The capacitance of the diode element (D2) is bigger than the capacitance of the capacitor element (C1) when the current (I2) through the diode element (D2) exceeds a maximum value. |
申请公布号 |
AU7049394(A) |
申请公布日期 |
1995.01.03 |
申请号 |
AU19940070493 |
申请日期 |
1994.05.31 |
申请人 |
RAMOT UNIVERSITY AUTHORITY FOR APPLIED RESEARCH & INDUSTRIAL DE |
发明人 |
MENACHEM NATHAM;GERMAN ASHKINAZI;BORIS MEYLER;LEONID ZOLOTAREVSKI;OLGA ZOLOTAREVSKI |
分类号 |
H01L27/04;H01L21/822;H01L27/144;H01L29/868;H01L29/872;H01L29/93 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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