发明名称 |
Electrically programmable non-volatile semiconductor memory device and manufacturing method thereof |
摘要 |
An A-1 transistor type flash EEPROM is disclosed. The memory cell in the EEPROM comprises: a first control gate which is formed, through a first insulating film, on a first channel region formed between a source region and a drain region. A floating gate is formed on the second channel region through a second insulating film and on the first control gate through the first interlayer insulating film. A second control gate is formed on a surface of the floating gate through a second interlayer insulating film. One end of the second control gate and one end of the first control gate are electrically connected to each other through a third control gate, thereby enhancing capacitance between the control gates and the floating gate.
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申请公布号 |
US5378643(A) |
申请公布日期 |
1995.01.03 |
申请号 |
US19920999341 |
申请日期 |
1992.12.31 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
AJIKA, NATSUO;ARIMA, HIDEAKI |
分类号 |
H01L21/8247;H01L21/28;H01L21/336;H01L29/788;H01L29/792;(IPC1-7):H01L21/265 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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