发明名称 |
Electrode structure for III-V compound semiconductor element and method of manufacturing the same. |
摘要 |
<p>The present invention relates to an electrode structure formed on a III-V compound semiconductor element (1) and a method for manufacturing the same and an object thereof is to provide an electrode which exhibits a high wire bonding strength, a low ohmic contact resistance, and high reliability, and is easy to shape itself. The electrode structure of the present invention is formed by annealing after the formation of a laminated structure having an ohmic layer (2) including at least Ni formed on the III-V compound semiconductor element (1), a bonding layer (5) to be connected with a bonding wire, a stopper layer (4) provided between the ohmic layer (2) and the bonding layer (5) and an isolation layer (3) provided between the stopper layer (4) and the ohmic layer (2).</p> |
申请公布号 |
EP0402936(B1) |
申请公布日期 |
1994.12.28 |
申请号 |
EP19900111333 |
申请日期 |
1990.06.15 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
YANO, TAKASHI C/O OSAKA WORKS;YAMABAYASHI, NAOYUKI, C/O OSAKA WORKS |
分类号 |
H01L21/28;H01L21/285;H01L23/485;H01L29/43;H01L29/45;(IPC1-7):H01L29/40 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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