| 摘要 |
A semiconductor optical device such as a light modulator has a light absorbing/transmitting layer (12) responsive to an electric field for changing the intensity of an output light, and the light absorbing/transmitting layer (12) is implemented by a type-II super-lattice structure formed by using a first compound semiconductor material (InAlAs) and a second compound semiconductor material (n-InP), wherein the second compound semiconductor material is larger in electron affinity as well as the total of electron affinity and energy band gap than the first compound semiconductor material so that a large extinction ratio is achieved. <IMAGE> |
