| 摘要 |
PURPOSE:To lower the crystallizing temperature of a thin film composed of amorphous silicon so as to reduce the crystallizing time of the thin film by forming the thin film on a very thin film of a catalytic metal for low- temperature crystallization. CONSTITUTION:After selectively introducing nickel in the form of a nickel silicate film to an area 100 as a catalyst for low-temperature crystallization, an amorphous silicon film 104 is formed by the well-known plasma CVD method and the film 104 is crystallized by heating the film 104 for four hours at 550 deg.C. As a result, crystal growth takes place in the direction perpendicular to the substrate 101 in the nickel-introduced area 100 and, in the other area than the area 100, lateral crystal growth takes place in the direction 105 parallel to the substrate 101. Thus a crystalline silicon film is obtained. Therefore, the amorphous silicon film used for active-matrix type liquid crystal display devices having large screens can be crystallized at a temperature which is sufficiently lower than the strain point of glass. |
