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发明名称
Verfahren zur Herstellung von Siliciumcarbid-Sinterkörpern hoher Dichte.
摘要
申请公布号
DE69014142(D1)
申请公布日期
1994.12.22
申请号
DE19906014142
申请日期
1990.01.17
申请人
NGK INSULATORS, LTD., NAGOYA, AICHI, JP
发明人
KAWASAKI, SHINJI, NGK ICHIOKA-RYO, 38-2, NAGOYA CITY, AICHI PREF., JP;KAJITA, MASAHARU, TAJIMI CITY, GIFU PREF., JP;MATSUHIRO, KEIJI, NAGOYA-CITY, AICHI PREF., JP
分类号
C04B35/575;(IPC1-7):C04B35/56
主分类号
C04B35/575
代理机构
代理人
主权项
地址
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