| 摘要 |
PURPOSE:To form an arbitrary carrier concentration distribution at an arbitrary depth in a semiconductor by continuously irradiating the growing surface of a semiconductor layer with ions and, at the same time, changing the ion irradiating energy with time. CONSTITUTION:An RF-DC coupled bias sputtering device has a chamber 101, semiconductor target 102, and substrate 103 and is constituted of a gas introducing port 104 and evacuating system 105. In addition, the ion irradiating energy to the substrate 103 is controlled by means of a DC power source 108'. The sputtering device can change the carrier density while maintaining the crystallinity in an excellent state by respectively using phosphorus-doped Si and Si for the target 102 and substrate 103 and forming a film by changing the ion irradiating energy with time. Therefore, a semiconductor having an arbitrary carrier density distribution at an arbitrary depth can be obtained. |
