| 摘要 |
PURPOSE:To downsize an element as a laser oscillating material which allows wavelength variation in a near infrared area and improve laser oscillating efficiency by doping Ga with Er or Pr at the time of forming an Er or Pr doped perovskite thin film light guide on the surface of perovskite single crystal by sputtering. CONSTITUTION:Undoped perovskite single crystal is expressed as ABAl (A; Ca<2+> or Sr<2+>, B; one selected from Y<3+>, Gd<3+>, La<3+>). A thin film light guide for the crystal is Er or Pr and Ga doped perovskite crystal expressed as ABxLn1-xGayAl O4 (A; Ca<2+> or Sr<2+>, B; Er<3+> or Pr<3+>, Ln; one selected from Y<3+>, Gd<3+> and La<3+>, x; 0.001<=x<=0.2, y:0.01<=x<=0.1). A sintered body adjusted to have such quantity ratios is used as a target. Thus, the crystal provided with the thin film light guide which allows the downsizing of an element and efficient laser oscillating efficiency is provided. |
