| 摘要 |
The surface emitting laser provided with a resonator of the present invention having a structure in which a quantum well structure (29A,36C) where a light absorption wavelength region is changed due to the Wannier-Stark effect or quantum-confinement Stark effect is formed in the non-doped Distributed Bragg Reflector mirror (29,36) at the opposite side to a semiconductor substrate out of a pair of Distributed Bragg Reflector mirrors (22,29,36) sandwiching the resonator. <IMAGE> |
