| 发明名称 |
Operational amplifier using bipolar junction transistors in silicon-on-sapphire |
| 摘要 |
A method for fabricating low leakage current bipolar junction transistors of silicon-on-sapphire for efficient use in operational amplifiers utilizes all implant technology, improved silicon conditioning processing, and low temperature annealing.
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| 申请公布号 |
US5374567(A) |
申请公布日期 |
1994.12.20 |
| 申请号 |
US19930065321 |
申请日期 |
1993.05.20 |
| 申请人 |
THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE NAVY |
发明人 |
CARTAGENA, ERIC N. |
| 分类号 |
H01L21/331;H01L27/12;H01L29/73;(IPC1-7):H01L21/265 |
主分类号 |
H01L21/331 |
| 代理机构 |
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