发明名称 HIGHLY PURE SILICON NITRIDE-SILICON CARBIDE COMPLEX FINE POWDER AND ITS PRODUCTION
摘要 PURPOSE:To obtain a raw material for a superconductor excellent in heat shock resistance and strength by baking amorphous fine powders consisting of Si, C, N and H and synthesized by CVD method from an organosilicon compound having limited impurities such as Fe, Ca, Al and Na. CONSTITUTION:An organosilicon compound (e.g. hexamethyldisilazane [(CH3)3 Si]2NH] containing <=10ppm each of Fe, Ca, Al and Na as impurities is used as a raw material. From this raw material, amorphous fine powders consisting of Si, C, N and H are synthesized by using a CVD reaction tube made by installing a graphite sheet or tube containing <=100ppm above-mentioned impurities in an inner wall of the reaction tube. Then, the fine powders are baked in a non-oxidative atmosphere at 1000-1600 deg.C. Thus, silicon nitride - silicon carbide complex powders containing <=5ppm each impurity of Fe, Ca, Al and Na, <=0.01ppm B and 0.2<=C<=29wt.%. are obtained.
申请公布号 JPH06345412(A) 申请公布日期 1994.12.20
申请号 JP19930135819 申请日期 1993.06.07
申请人 MITSUBISHI GAS CHEM CO INC 发明人 YOKOSE EMIKO;YAMAZAKI NOBUYOSHI;ISAKI HIROMASA
分类号 C01B21/068;C01B31/36 主分类号 C01B21/068
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