Method for filling contact holes in a semiconductor layer structure

摘要

In order to fill contact holes (6) which extend in a semiconductor layer structure (1) down to interconnections (2) with which contact is to be made, the interconnections are connected via auxiliary contact holes (3) to a conductive layer (4). The contact holes (6) are filled with metal (9) by electrolytic deposition, the interconnections (2) being connected up via an auxiliary contact (8) to the conductive layer (4) as the other electrode in an electrolyte. The conductive layer (4) is subsequently removed. <IMAGE>