Method for tungsten contact hole filling by full-surface tungsten deposition with reduced layer thickness and back-etching with inverse loading effect,申请号DE19934319089-传众专利搜索

发明名称	Method for tungsten contact hole filling by full-surface tungsten deposition with reduced layer thickness and back-etching with inverse loading effect
摘要	Method for tungsten contact hole filling by full-surface tungsten deposition with reduced layer thickness and back-etching with inverse loading effect. By means of a cooling process, the real wafer temperature during the etching process is kept below 70 DEG C and the etching rate in the contact hole is smaller than or equal to that on the substrate surface. <IMAGE>
申请公布号	DE4319089(A1)	申请公布日期	1994.12.15
申请号	DE19934319089	申请日期	1993.06.08
申请人	SIEMENS AG, 80333 MUENCHEN, DE	发明人	KOERNER, HEINRICH, DIPL.-CHEM. DR., 8206 BRUCKMUEHL, DE;SEIDEL, UWE, 8000 MUENCHEN, DE;BRAUN, RAINER, 8000 MUENCHEN, DE
分类号	C23F4/00;H01L21/3213;H01L21/768;(IPC1-7):H01L21/90;H01L21/467;H01L23/522	主分类号	C23F4/00
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