摘要 |
<p>Provided is a semiconductor device for power switching applications which utilizes a plurality of gate terminals provided in pressure contact with gate electrodes, the gate terminal/electrodes situated so as separate current flow therethrough at time of gate turn off into separate components, thereby reducing the transverse voltage drop of the gate electrode. In one embodiment, the invention is applied to a gate turn off (GTO) thyristor, and in another embodiment, towards a reverse conducting GTO thyristor.</p> |
申请人 |
FUJI ELECTRIC CO., LTD., KAWASAKI, KANAGAWA, JP |
发明人 |
TAKAHASHI, YOSHIKAZU, SAWAMURA, MATUMOTO, JP;ENDO, KATUHIRO, SATOYAMABE, MATUMOTO, JP;KIRIHATA, FUMIAKI, SATOYAMABE, MATUMOTO, JP;KAKIKI, HIDEAKI, TYUOU, MATUMOTO, JP |