| 摘要 |
A method of fabricating a semiconductor device, in particular of forming a polysilicon film on a step portion of an insulation film made by a trench or a contact hole is disclosed which includes the steps of depositing an amorphous silicon film on the step portion while doping impurities into the amorphous silicon film and carrying out heat treatment to convert the amorphous silicon film into a polycrystalline silicon film, thereby the polysilicon film on a step portion being formed.
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