| 摘要 |
A phase shift mask having a phase shifter with an edge angle ranging from 70 DEG to 85 DEG or 95 DEG to 110 DEG is used as a reticle in forming a resist pattern so that the exposure pattern applied to the resist has a light intensity distribution with constant light intensity contrast. A fine resist pattern having a predetermined width no more than the wavelength of the light used to form the pattern is produced precisely and reproducibly under constant developing conditions. In addition, there is provided on the side wall of the phase shifter of the phase shift mask a light shielding film which, due to its width, cannot be resolved as an exposure pattern itself. A region in which the light intensity is reduced from the constant level corresponding to the width of the light shielding film in the exposure pattern is formed by the projection lens. Therefore, a fine resist pattern having a predetermined width no more than the wavelength of the light used to form the pattern is produced precisely and reproducibly using constant developing conditions. As a result, semiconductor devices with good performance can be manufactured with high yield.
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