发明名称 DIELECTRIC THIN FILM STRUCTURE AND MANUFACTURE THEREOF
摘要 PURPOSE:To prevent the fatigue deterioration of a dielectric thin film by the repetition of the polarization inversion by providing a laminated structure, wherein a ferroelectric thin film is held with paraelectric thin films. CONSTITUTION:A paraelectric layer as the first layer, a PLZT layer as the second layer and a paraelectric layer as the third layer are constituted on a substrate 1. As the substrate 1, a material, which has epitaxial relationship with a dielectric thin film of magnesium oxide, is used. On the substrate 1, an SrTiO3 thin film 2 among perovskite-type paraelectrics is formed as the first layer. A PLZT thin film 3 of a perovskite-type ferroelectric is formed on the SrTiO3 thin film as the second layer. An SrTiO3 thin film 3 of a perovskite paraelectric thin film is formed on the PLZT thin film 3 as the third layer. The PLZT thin film 3 is not direct contact with an electrode or the substrate 1. The decrease in electric characteristics caused by the repetition of the electric field of the ferroelectric thin film is suppressed.
申请公布号 JPH06338598(A) 申请公布日期 1994.12.06
申请号 JP19930128759 申请日期 1993.05.31
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 JINNO ISAKU;HAYASHI SHIGENORI;HIRAO TAKASHI
分类号 C23C14/08;H01L21/822;H01L21/8242;H01L21/8246;H01L27/04;H01L27/10;H01L27/105;H01L27/108 主分类号 C23C14/08
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