发明名称 Semiconductor member and process for preparing semiconductor member
摘要 A process for preparing a semiconductor member by forming a member having a non-porous monocrystalline semiconductor region on a porous monocrystalline semiconductor region, bonding the insulating surface of a member to the surface of the non-porous monocrystalline semiconductor region, and then removing the porous monocrystalline semiconductor region by etching.
申请公布号 US5371037(A) 申请公布日期 1994.12.06
申请号 US19910740439 申请日期 1991.08.05
申请人 CANON KABUSHIKI KAISHA 发明人 YONEHARA, TAKAO
分类号 H01L21/762;(IPC1-7):H01L21/20 主分类号 H01L21/762
代理机构 代理人
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