| 摘要 |
PURPOSE:To provide a pattern having a high contrast in pattern formation by using the mask having half transmission parts by suppressing the light intensity on a wafer surface from the half transmission parts without impairing the effect thereof. CONSTITUTION:This mask has the light transmission pattern parts 205 corresponding to desired patterns and half transmission phase shift parts 206 on the peripheries of the patterns having transmittance t1 and in addition, half light shielding or light shielding parts 207 having the transmittance smaller than the transmittance t1 on a mask substrate 201. The transmittance of a light shielding films 204 consisting of a half light shielding material or light shielding material is satisfactory if this transmittance is smaller than 1. Light passes a 180 deg. phase shift film 202 consisting of the half transmission material having the transmittance t1 and in addition, passes the light shielding film 204 in the light shielding parts 207 and, therefore, if the transmittance of the light shielding parts 207 is defined as t2, this transmittance t2 is eventually smaller than the transmittance t1. The relation with the transmittance is expressed by the following equation: 0<=t2<t1. |
