发明名称 SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE:To eliminate a harmful melt cold formed when an inner lead part is connected, to protect arm outer lead part against connection failure, and to prevent a lead adhesive film from being warped when a protective film is formed on it in the manufacture of a semiconductor device which has such a structure that an inner lead part is connected to a semiconductor chip, and an outer lead part is led out of a package. CONSTITUTION:A plated metal layer 23 on the inner part of a lead 22 is formed thin, a plated metal layer 24 on the outer part of the lead 22 is formed thick, and the melting point of the plated metal layer 23 is set higher than that of the plated metal layer 24 so as to eliminate a harmful melt clod and to protect a connection failure. Protective films 9 and 28 or protective films split at an adequate interval are formed on both the sides of an insulating film 8 so as to prevent it from being warped.</p>
申请公布号 JPH06338536(A) 申请公布日期 1994.12.06
申请号 JP19930127626 申请日期 1993.05.31
申请人 FUJITSU LTD 发明人 WATANABE HISASHI;ISHIBE YUJI
分类号 H01L21/60;H01L23/50;(IPC1-7):H01L21/60 主分类号 H01L21/60
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