| 摘要 |
PURPOSE:To provide a formation method of a multilayer resist layer which can block formation of a mixing layer and can acquire a good multilayer resist pattern of high accuracy without carrying out a baking process. CONSTITUTION:A lower resist layer 2 is formed on a foundation substrate 1, an ion implantation layer 3 is formed on a surface of the lower resist layer 2 by carrying out ion implantation and an upper resist layer 4 is formed thereon. |
