| 摘要 |
PURPOSE:To obtain a dielectric composition to be used in an electronic part field and a semi-conductor device field mainly and having the structure phase change corresponding to the temperature change and the pressure change or the like. CONSTITUTION:This dielectric composition has the compound perovskite crystal structure expressed with A(BI1/3BII2/3)O3, and the mean ion radius (R) of the A site thereof exists in a range of 1.06<=R<=1.37, and the structure phase change is generated at a temperature between the liquid nitrogen temperature and 400 deg.C. Though the change of the dielectric factor with the structure phase change is very small, since the change thereof shows maximum and slope, the zero temperature coefficient is obtained by controlling the radius of ion. Especially the perovskite compound, of which dielectric factor can be changed freely with temperature change, is obtained by combining new A site ions composed of Ba, Sr and Cr. |
